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| DC COMPONENTS CO., LTD. R 2SB772 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in output stage of 1W audio amplifier, voltage regulator, DC-DC converter and relay driver. Pinning 1 = Emitter 2 = Collector 3 = Base .304(7.72) .285(7.52) .105(2.66) .095(2.41) TO-126 .041(1.05) .037(0.95) .154(3.91) .150(3.81) .055(1.39) .045(1.14) .152(3.86) .138(3.50) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current(DC) Total Power Dissipation(TC=25 C) Total Power Dissipation(TA=25 C) Junction Temperature Storage Temperature o o Symbol VCBO VCEO VEBO IC IC IB PD PD TJ TSTG Rating -40 -30 -5 -3 -7 -0.6 10 1 +150 -55 to +150 Unit V V V A A A W W o o .279(7.09) .275(6.99) 1 23 3 Typ .052(1.32) .048(1.22) 3 Typ o o .620(15.75) .600(15.25) .032(0.81) .028(0.71) .189(4.80) .171(4.34) .022 (0.55) Typ 3 Typ o C Dimensions in inches and (millimeters) 3 Typ o C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT Cob 380s, Duty Cycle 2% Min -40 -30 -5 30 100 - Typ -0.3 -1 200 80 55 Max -1 -1 -0.5 -2 400 - Unit V V V A A V V MHz pF Test Conditions IC=-100A IC=-1mA IE=-10A VCB=-30V VEB=-3V IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A IC=-20mA, VCE=-2V IC=-1A, VCE=-2V IC=-0.1A, VCE=-5V IE=0, VCB=-10V, f=1MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain (1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Classification of hFE2 Rank Range Q 100~200 P 160~320 E 200~400 |
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